Cheng-Ming Huang
Conductive films provide electrical interconnection among devices as well as the outside. The primary metallization applications can be divided into three categories: gate, contact, and interconnection. Polysilicon and silicide are frequently used in gates and interconnects in MOS devices. Aluminum and copper are the metals of choice as contact and second-level interconnection to the outside. In some cases, a multiple-layer structure involving a diffusion barrier is used. Titanium / Titanium Nitride / Aluminum / Titanium Nitride is useful in providing reliable connection to external components.
1. Introduction
2. Conducting Thin Films
3. Metal Thin Film Characteristics
4. Metal Chemical Vapor Deposition (CVD)
5. Physical Vapor Deposition (PVD)
6. Copper Metallization
7. Summary
Aout TSRI
The Taiwan Semiconductor Research Institute (TSRI) under the National Applied Research Laboratories (NARLabs) is a consolidation of the National Chip Implementation Center (CIC) and National Nano Device Laboratories (NDL). An integrated research environment for related fields of study in Taiwan is urgently required to enhance the overall cultivation of quality talents in response to the introduction of the 3-nm node; rapid development of new applications (e.g., artificial intelligence, quantum computers, next-gen magnetic random access memory, high-speed computers, and 5G network); and challenges posed by countries including European countries, the United States, Japan, and South Korea.