Fu-Ju Hou
In thermal oxidation, silicon wafers are oxidized in furnaces at about 1000 °C. The furnaces consist of a quartz tube in which the wafers are placed on a carrier made of quartz glass. For heating there are several heating zones and for chemical supply multiple pipes. Quartz glass has a very high melting point (above 1500 °C) and thus is applicable for high temperature processes. To avoid cracks or warping, the quartz tube is heatened slowly (e.g. +10 °C per minute). The tempering of the tube can be done very accurate via individual heating zones.
Diffusion (sometimes referred to as annealing) is a thermal treatment used to move dopants, or impurities, and make dopants introduced by ion implantation electrically active. Oxidation forms a silicon oxide layer on the wafer's surface, which acts as an insulating or protective layer over it.
Oxidative and Diffusion
Aout TSRI
The Taiwan Semiconductor Research Institute (TSRI) under the National Applied Research Laboratories (NARLabs) is a consolidation of the National Chip Implementation Center (CIC) and National Nano Device Laboratories (NDL). An integrated research environment for related fields of study in Taiwan is urgently required to enhance the overall cultivation of quality talents in response to the introduction of the 3-nm node; rapid development of new applications (e.g., artificial intelligence, quantum computers, next-gen magnetic random access memory, high-speed computers, and 5G network); and challenges posed by countries including European countries, the United States, Japan, and South Korea.