Chun-Hong Chen
Epitaxy is a method to grow or deposit monocrystalline films on a structure or surface. There are two types of epitaxy-homoepitaxy and heteroepitaxy. Homoepitaxy is a process in which a film is grown on a substrate of the same composition. Heteroepitaxy is a film that is grown on a substrate, which has a different composition. Epitaxial silicon is grown using vapor-phase epitaxy (VPE). This is a modification of chemical vapor deposition (CVD). Another technology, molecular-beam epitaxy (MBE), is mainly for compound semiconductors. MBE is a slow, line-of-sight technique, not suitable for filling trenches and other three-dimensional structures.
Wafer Manufacturing and Epitaxy
Aout TSRI
The Taiwan Semiconductor Research Institute (TSRI) under the National Applied Research Laboratories (NARLabs) is a consolidation of the National Chip Implementation Center (CIC) and National Nano Device Laboratories (NDL). An integrated research environment for related fields of study in Taiwan is urgently required to enhance the overall cultivation of quality talents in response to the introduction of the 3-nm node; rapid development of new applications (e.g., artificial intelligence, quantum computers, next-gen magnetic random access memory, high-speed computers, and 5G network); and challenges posed by countries including European countries, the United States, Japan, and South Korea.